Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-10T08:55:09.616Z Has data issue: false hasContentIssue false

Experimental Studies and Physical Model of Efficient, Tunable Injection Using Tunnel-Transparent Dielectric Contacts on Polymer Light-Emitting Devices

Published online by Cambridge University Press:  11 February 2011

Ludmila Bakueva
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto, 10 King's College Rd., Toronto M5S 3G4, Canada
Sergei Musikhin
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto, 10 King's College Rd., Toronto M5S 3G4, Canada
Edward H. Sargent
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto, 10 King's College Rd., Toronto M5S 3G4, Canada
Alexander Shik
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto, 10 King's College Rd., Toronto M5S 3G4, Canada
Get access

Abstract

Most conducting polymers used for light-emitting devices have a small electron affinity, creating a high barrier for electron injection resulting in low injection efficiency. To improve injection characteristics, we fabricated and investigated multi-layer contacts with a tunneltransparent dielectric layer of nanometer thickness. Polymer layers were prepared by spin coating, and dielectric and metallic contact layers subsequently grown by vacuum deposition. Samples with such multi-layer cathodes demonstrated a current-voltage characteristic with negative differential resistance. At larger applied voltage, electroluminescence was observed with an efficiency larger than for a simple cathode of the same metal. We have developed a model to describe double injection through multi-layer contacts which explains these salient observed features. The increase in injection efficiency is caused by the voltage drop at the dielectric layer, shifting the metal Fermi level relative to the polymer molecular orbitals responsible for carrier transport. The negative differential resistance is explained by the strong dependence of dielectric tunnel transparency on voltage, a dependence which is qualitatively different for electrons and holes. Further flexibility in the functional characteristics of the injecting contacts is achieved through the use of an additional thin metallic layer playing the role of a base electrode, similar to hot-electron transistors with metallic base.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shik, A., Yu, S., Johnson, E., Ruda, H., and Sargent, E. H., Sol.-St. Electr. 46, 61 (2002)CrossRefGoogle Scholar
2. Bakueva, L., Musikhin, S., Sargent, E. H., and Shik, A., Mater. Res. Soc. Symp. Proc. 708, 107 (2002)Google Scholar
3. Murao, K. and Suzuki, K., Appl. Phys. Lett. 47, 724 (1985)CrossRefGoogle Scholar
4. Kojima, H., Ozawa, A., Takahashi, T., Nagaoka, M., Homma, T., Nagatomo, T., and Omoto, O., J. Electrochem. Soc. 144, 3628 (1997)CrossRefGoogle Scholar
5. Manca, J. et al., Optical Mater. 9, 134 (1998)CrossRefGoogle Scholar
6. Kawamoto, A., Suzuoki, Y., and Mizutani, T., Thin Solid Films 327–329, 454 (1998)Google Scholar
7. Xu, X. H., Yin, S. G., Kong, F., Zhang, F. Q., Yao, K. D., and Huang, W. Q., J. Polymer Sci. 39, 589 (2001)Google Scholar