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Extrinsic Gettering of Copper in Silicon: Heterogeneous Precipitation on Near-Surface Dislocations

Published online by Cambridge University Press:  26 February 2011

P.M. Rice ,
M.J. Kim  and
R.W. Carpenter
P.M. Rice
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287–1704.
M.J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287–1704.
R.W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, Arizona 85287–1704.
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Abstract

Copper was precipitated on extrinsic near-surface dislocations in {100} Si wafers. Several types of precipitates were heterogeneously nucleated on low index planar arrays. Large crystalline precipitates with visible strain fields proved to bea silicide. Large weakly diffracting precipitates without strain fields proved to be voids. Small, thin, partially crystalline particles of unknown composition also precipitated on the arrays. Point defects played an important role in the precipitation reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 385
Copyright
Copyright © Materials Research Society 1991

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References

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