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Fabrication and Characterization of Colossal Dielectric Response of Polycrystalline Ca1-x SrxCu3Ti4O12 (0≤x≤1) Ceramics

Published online by Cambridge University Press:  29 May 2012

Sung Yun Lee
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Korea
Duk-Keun Yoo
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Korea
Jihye Lee
Affiliation:
Department of Physics, Ewha Womans University, Seoul 120-750, Korea
William Jo
Affiliation:
Department of Physics, Ewha Womans University, Seoul 120-750, Korea
Youn-Woo Hong
Affiliation:
Bio-IT Convergence Center, Korea Institute of Ceramic Eng. & Tech., Seoul 153-801, Korea
Young-Hwan Kim
Affiliation:
Nano-Materials Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
Sang-Im Yoo
Affiliation:
Department of Materials Science and Engineering, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-744, Korea
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Abstract

We report the microstructures and dielectric properties of Ca1-xSrxCu3Ti4O12 (C1-xSxCTO, 0≤x≤1) ceramics sintered at the various sintering temperatures ranging from 1000 to 1060˚C in air. The linear increase in lattice parameter in C1-xSxCTO (0≤x≤1) ceramics is observable for the full range of substitution. However, the second phases of SrTiO3 and CuO start to occur from the composition of x=0.8, implying that a stoichiometric SrCu3Ti4O12 (SCTO) compound may not exist. While the C0.6S0.4CTO and C0.4S0.6CTiO samples exhibit relatively lower dielectric constant (εr) of ∼40,000 below 1 kHz, the CaCu3Ti4O12 (CCTO) and SCTO show the extremely high εr values of ~120,000 and ∼180,000, respectively. Complex impedance (Z*) and modulus (M*) spectroscopy revealed that the capacitance (C) and resistivity (ρ) values of grain boundary in all samples are much higher than those of grains.

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Articles
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Subramanian, M. A., Li, Dong., Duan, N., Reisner, B. A. and Sleight, A. W., J. Solid State Chem. 151, 323 (2000).CrossRefGoogle Scholar
Amaral, F., Costa, L. C. and Valente, M. A., J. Non-Cryst Solids. 357, 775 (2011).CrossRefGoogle Scholar
Li, M., Cai, G., Zhang, D. F., Wang, W. Y., Wang, W. J. and Chen, X. L., J. Appl. Phys. 104, 074107 (2008).CrossRefGoogle Scholar
Feng, L., Tang, X., Yan, Y., Chen, X., Jiao, Z. and Cao, G., Phys. Stat. Sol. (a), 203, R22 (2006).CrossRefGoogle Scholar
Xue, H., Guan, X., Yu, R. and Xiong, Z., J. Alloy. Compd. 482, L14 (2009).CrossRefGoogle Scholar
Schmidt, R., and Sinclair, D. C., Chem. Mater. 22, 6 (2010).CrossRefGoogle Scholar
Li, J., Subramanian, M. A., Rosenfeld, H. D., Jones, C. Y., Toby, B. H., and Sleight, A. W., Chem. Mater. 16, 5223 (2004).CrossRefGoogle Scholar
Werner, P. E., Eriksson, L. and Westdahl, M., J. Appl. Cryst. 18, 367 (1985).CrossRefGoogle Scholar
Li, J., Subramanian, M. A., Rosenfeld, H. D., Jones, C. Y., Toby, B. H., and Sleight, A. W., Chem. Mater. 16, 5223 (2004).CrossRefGoogle Scholar
Lee, S. Y., Yoo, D. K. and Yoo, S. I., Electron. Mater. Lett. 3, 23 (2007).Google Scholar
Lee, S. Y., Hong, Y. W. and Yoo, S. I., Electron. Mater. Lett. 7, 287 (2011).CrossRefGoogle Scholar
Adams, T. B., Sinclair, D. C. and West, A. R., Adv. Mater. 14, 1321 (2002).3.0.CO;2-P>CrossRefGoogle Scholar
Adams, T. B., Sinclair, D. C. and West, A. R., J. Am. Ceram. Soc. 89, 3129 (2006).CrossRefGoogle Scholar
Adams, T. B., Sinclair, D. C. and West, A. R., Phys. Rev. B. 73, 094124 (2006).CrossRefGoogle Scholar
Shao, S. F., Zhang, J. L., Zheng, P., Zhong, W. L. and Wang, C. L., J. Appl. Phys. 99, 084106 (2006).CrossRefGoogle Scholar
Sinclair, D. C. and West, A. R., J. Appl. Phys. 66, 3850 (1989).CrossRefGoogle Scholar