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Fabrication and Characterization of Thermoelectric Generators From SiO2/SiO2+Au Nano-layered Superlattices

Published online by Cambridge University Press:  31 January 2011

Marcus Pugh ,
Rufus Durel Hill ,
Brittany James ,
Hervie Martin ,
Cydale Smith ,
S. Budak ,
Kaveh Heidary ,
Claudiu Muntele  and
Daryush Ila
Marcus Pugh
Affiliation:
marcuspugp@yahoo.com, Alabama A&M Univeristy, Electrical Engineering, Normal, Alabama, United States
Rufus Durel Hill
Affiliation:
durel2004@yahoo.com, Alabama A&M Univeristy, Electrical Engineering, Normal, Alabama, United States
Brittany James
Affiliation:
brittany_m_james@yahoo.com, Alabama A&M Univeristy, Electrical Engineering, Normal, Alabama, United States
Hervie Martin
Affiliation:
hvmthree@gmail.com, Alabama A&M Univeristy, Electrical Engineering, Normal, Alabama, United States
Cydale Smith
Affiliation:
cydale@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, Department of Physics, Normal, Alabama, United States
S. Budak
Affiliation:
satilmis.budak@aamu.edu, Alabama A&M Univeristy, Electrical Engineering, Normal, Alabama, United States
Kaveh Heidary
Affiliation:
kaveh.heidary@aamu.edu, Alabama A&M Univeristy, Electrical Engineering, Normal, Alabama, United States
Claudiu Muntele
Affiliation:
claudiu@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, Department of Physics, Normal, Alabama, United States
Daryush Ila
Affiliation:
daryush.ila@scholarone.com, Alabama A&M University, Center for Irradiation of Materials, Department of Physics, Normal, Alabama, United States
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Abstract

The efficiency of the thermoelectric devices is limited by the properties of n- and p-type semiconductors. Effective thermoelectric materials have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT = S2σT/K, where S is the Seebeck coefficient, σ is the electrical conductivity, T is the absolute temperature and K is the thermal conductivity. In this study we prepared the thermoelectric generator device of SiO2/SiO2+Au multi-layer super-lattice films using the ion beam assisted deposition (IBAD). In order to determine the stoichiometry of the elements of SiO2 and Au in the grown multilayer films and the thickness of the grown multi-layer films Rutherford Backscattering Spectrometry (RBS) and RUMP simulation software package was used. The 5 MeV Si ion bombardments was performed to make quantum clusters in the multi-layer super-lattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we measured the cross-plane Seebeck coefficient, the cross-plane electrical conductivity, and the cross-plane thermal conductivity for different fluences.

Keywords

ion-beam processingthermoelectricitynanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD13-05
Copyright
Copyright © Materials Research Society 2009

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References

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