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Fabrication and electrical properties of 0.7BiFeO3-0.3PbTiO3 films on stainless steel by the sol-gel method

Published online by Cambridge University Press:  17 April 2012

Chen Zhao ,
Dan Jiang ,
Shundong Bu  and
Jinrong Cheng
Chen Zhao
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
Dan Jiang
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
Shundong Bu
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
Jinrong Cheng
Affiliation:
School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
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Abstract

Ferroelectric 0.7BiFeO3-0.3PbTiO3 (BFO-PT) films were deposited on stainless steel substrates by the sol-gel method. A thin layer of PbTiO3 (PT) was introduced between the substrates and BFO-PT films in order to decrease the annealing temperature of BFO-PT films. X-ray diffraction analysis reveals that BFO-PT films could be well crystallized into the perovskite structure at about 575 oC. Scanning electron microscope (SEM) images show that BFO-PT thin films have grain size of about 50∼60 nm. Our results indicated BFO-PT films deposited on stainless steel substrates maintained the excellent ferroelectric properties with remnant polarization of about 40∼50 μC/cm2.

Keywords

filmferroelectricdielectric properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1449: Symposium BB – Solution Synthesis of Inorganic Films and Nanostructured Materials , 2012 , mrss12-1449-bb06-04
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

[1] Sai Sunder, V.V.S.S., Halliyal, A., Umarji, A.M., J. Mater. Res., 10, 1301 (1995).Google Scholar
[2] Cheng, J.R., Cross, L.E., Mat. Res. Soc. Proc., 2004. 784, C8.16.1 (2004).Google Scholar
[3] Zhou, X.W., Yu, S.W., Yuan, B.R., Yang, W.F., and Cheng, J.R., IEEE Int. Symp. Appl. Ferroelectric., 2009. Proceedings of the the 2009 18th IEEE International Symposium on Application of Ferroelectrics, 194–197 (2009).Google Scholar
[4] Bouregba, R., Poullain, G., Vilquin, B., Murray, H., Materials Research Bulletin., 35, 1381 (2000).Google Scholar
[5] Okada, M., Tominaga, K., Araki, T., Katayama, S., and Sakashita, Y., Jpn. J. Appl. Phys., 29, 718 (1990).Google Scholar
[6] You, D.J., Jung, W.W., Choi, S.K., and Cho, Yasuo, Appl. Phys. Lett., 84, 3346 (2004).Google Scholar
[7] Hea, Z.L., Wang, Y.G. and Bia, K., Solid State Communications., 150, 1837 (2010).Google Scholar
[8] Seveno, R., Limousin, P., Averty, D., Chartier, J.-L, Bihan, R le, Gundel, H.W., J. Euro. Ceram. Soc., 20(12), 2025 (2000).Google Scholar
[9] Cheng, J.R., Zhu, W.Y., Li, N. and Cross, L.E., J. Appl. Phys. Lett., 81, 25 (2002).Google Scholar
[10] Wang, G.S., Rémiens, D., Dogheche, E., and Herdier, R., J.Am.Ceram.soc., 89(11), 3417 (2006).Google Scholar
[11] Yuan, B.R., Yu, S.W., Yang, W.F., Zhou, X.W., and Cheng, J.R., IEEE Int. Symp. Appl. Ferroelectric., 2009. Proceedings of the the 2009 18th IEEE International Symposium on Application of Ferroelectrics, 314 (2009).Google Scholar
[12] Zhao, Q.L., Cao, M.S., Yuan, J., Lu, R., Wang, D.W., Zhang, D.Q., Materials Letters., 64, 632–635 (2010).Google Scholar
[13] Nagarajan, V., Jenkins, IG, Alpay, SP, Li, H., Aggarwal, S., Salamanca-Riba, L., Roytburd, A.L. and Ramesh, R., J. Appl. Phys., 86, 595 (1999).Google Scholar