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Fabrication and Evaluation of Ternary Co-Fe-Si Structures Produced by Ion Beam Synthesis

Published online by Cambridge University Press:  25 February 2011

Tim D. Hunt ,
Brian J. Sealy ,
Jochen Hanebeck ,
Karen J. Reeson ,
Kevin P. Homewood ,
Russell M. Gwilliam ,
C. Douglas Meekison  and
G. Roger Booker
Tim D. Hunt
Affiliation:
University of Surrey, Department of Electronic and Electrical Engineering, Guildf ord, Surrey, GU2 5XH, UK
Brian J. Sealy
Affiliation:
University of Surrey, Department of Electronic and Electrical Engineering, Guildf ord, Surrey, GU2 5XH, UK
Jochen Hanebeck
Affiliation:
On an ERASMUS exchange from Institut fur Halbleitertechnik I, RWTH Aachen, W-5100, Germany
Karen J. Reeson
Affiliation:
University of Surrey, Department of Electronic and Electrical Engineering, Guildf ord, Surrey, GU2 5XH, UK
Kevin P. Homewood
Affiliation:
University of Surrey, Department of Electronic and Electrical Engineering, Guildf ord, Surrey, GU2 5XH, UK
Russell M. Gwilliam
Affiliation:
University of Surrey, Department of Electronic and Electrical Engineering, Guildf ord, Surrey, GU2 5XH, UK
C. Douglas Meekison
Affiliation:
University of Oxford, Department of Materials, Parks Road, Oxford, OX1 3PH.
G. Roger Booker
Affiliation:
University of Surrey, Department of Electronic and Electrical Engineering, Guildf ord, Surrey, GU2 5XH, UK
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Abstract

Dual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi2 and FeSi2. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi2 upon a CoSi2 layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 urn was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi2 layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 893
Copyright
Copyright © Materials Research Society 1993

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