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Fabrication of Ferroelectric Fet with Metal/PZT/SiO2/Si Structure

Published online by Cambridge University Press:  15 February 2011

Jun Yu ,
Wenli Zhou ,
Jifan Xie ,
Yuankai Zheng ,
Xiaoming Dong  and
Gang Liu
Jun Yu
Affiliation:
Department of Solid State Electronics, Huazhong University of Science & Technology, Wuhan, 430074, P.R., China
Wenli Zhou
Affiliation:
Department of Solid State Electronics, Huazhong University of Science & Technology, Wuhan, 430074, P.R., China
Jifan Xie
Affiliation:
Department of Solid State Electronics, Huazhong University of Science & Technology, Wuhan, 430074, P.R., China
Yuankai Zheng
Affiliation:
Department of Solid State Electronics, Huazhong University of Science & Technology, Wuhan, 430074, P.R., China
Xiaoming Dong
Affiliation:
Department of Solid State Electronics, Huazhong University of Science & Technology, Wuhan, 430074, P.R., China
Gang Liu
Affiliation:
Department of Solid State Electronics, Huazhong University of Science & Technology, Wuhan, 430074, P.R., China
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Abstract

We have fabricated a new ferroelectric memory FET, which consists of the Au/Pb(Zr0.52Ti0.48)O3/SiO2/Si gate structure. Ferroelectric PZT thin film with a thickness of 250~400 nm was prepared by using Excimer Laser Ablation Deposition. Silicon oxide successfully served as a buffer layer between ferroelectric and Si substrate to suppress the charge injection and prevent Pb interdiffusion. Electrical properties of the ferroelectric FET have been characterized through both the Capacitance vs. Voltage(C-V) and Current vs. Voltage(I-V) measurements, showing a typical memory characteristics of FET devices, i.e., the ON state and OFF state were nonvolatile for about thirty minutes and several hours, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 199
Copyright
Copyright © Materials Research Society 1998

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