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Fabrication of Highly Stable a-Si:H from Chlorinated Precursors

Published online by Cambridge University Press:  16 February 2011

M. Azuma ,
T. Yokoi  and
I. Shimizu
M. Azuma
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan 227
T. Yokoi
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan 227
I. Shimizu
Affiliation:
Tokyo Institute of Technology, The Graduate School, 4259 Nagatsuta, Midori-ku, Yokohama-city, Japan 227
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Abstract

High quality a-Si:H was fabricated from SiH2Cl2 by ECR hydrogen plasma at high growth rate (>15 A/s). After sticking the precursors, SiHnClm (n+m≤3), stable Si-network was formed by chemical reactions enhanced on the heated substrate due to strong interaction between Cl and H bonded with Si. The defect densities of 3×1015 and 3×1016 cm3 were obtained for the films in the as-grown and the saturated states after light soaking, respectively. In these stable films, a surprisingly large amount of voids (2–10 vol%) was found by the simulation of the spectra of pseudo-dielectric constant measured by spectral ellipsometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 239
Copyright
Copyright © Materials Research Society 1994

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