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Fabrication of high-performance photodetector based on AlGaN/GaN hetero-field-effect transistors with p-GaN gate

Published online by Cambridge University Press:  01 February 2011

Shuichi Miura ,
Takahiro Fujii ,
Motoaki Iwaya ,
Satoshi Kamiyama ,
Hiroshi Amano  and
Isamu Akasaki
Shuichi Miura
Affiliation:
m0634044@ccmailg.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan, +81-52-838-2430, +81-52-832-1244
Takahiro Fujii
Affiliation:
m0634040@ccmailg.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Motoaki Iwaya
Affiliation:
iwaya@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Satoshi Kamiyama
Affiliation:
skami@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Hiroshi Amano
Affiliation:
amano@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Isamu Akasaki
Affiliation:
akasaki@ccmfs.meijo-u.ac.jp, Meijo University, Department of Materials Science and Engineering, 21st COE "Nano-factory", 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
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Abstract

An AlGaN/GaN photo-hetero-field-effect transistor (photo-HFET) with a p-type GaN gate was fabricated and its properties were compared with those of a HFET without a p-type GaN layer. The photo-HFET with a p-GaN gate exhibited a high signal-to-noise ratio of five orders of magnitude and a dark current density of 10 nA/mm at a drain-source bias of 5 V. In contrast, when the photo-HFET was irradiated with 365 nm (490 μW/cm2) UV light, a photocurrent of over 1 mA/mm was achieved. The responsivity of the device was over 1 × 105 A/W.

Keywords

nitridephotoconductivitydevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I02-02
Copyright
Copyright © Materials Research Society 2007

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References

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