Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-28T22:36:07.682Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of IGZO and In2O3-channel Ferroelectric-gate Thin Film Transistors

Published online by Cambridge University Press:  01 February 2011

tomohiro Oiwa  and
Eisuke Tokumitsu
tomohiro Oiwa
Affiliation:
tokumitu@scholarone.com, Tokyo Institute of Technology, Yokohama, Japan
Eisuke Tokumitsu
Affiliation:
oiwa@neruo.pi.titech.ac.jp, Tokyo Institute of Technology, Yokohama, Japan
Get access

Abstract

We have fabricated and characterized ferroelectric-gate TFTs using In-Ga-Zn-O (IGZO) or In2O3 as a channel material. The ferroelectric gate insulator used in this work is (Bi,La)4Ti3O12 (BLT). We observed normal n-channel transistor operation for both IGZO and In2O3-channel TFTs. However, a charge injection type hysteresis was observed for IGZO channel TFTs in drain current – gate voltage (ID-VG) characteristics. Post fabrication anneal at 300oC reduced the charge-injection-tyoe hystereesis and the subthreshold swing was also improved from 0.27 to 0.19 V/decade. On the other hand, when the In2O3 was used as a channel, hysteresis due to the ferroelectric gate insulator was clearly observed in ID-VG characteristics. A memory window of 2V, a subthreshold voltage swing of 0.35V/decade, a field-effect mobility of 1.6 cm2/Vs, and a on/off drain current ratio of more than 10^6 were obtained.

Keywords

devicesferroelectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G13-07
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Carcia, P. F., McLean, R. S., Reilly, M. H., and Nunes, G. Jr., Appl. Phys.Lett. 82, 1117 (2004)10.1063/1.1553997Google Scholar
2 Nishii, J., Hossain, F. M., Takagi, S., Aita, T., Saikusa, K., Ohmaki, Y., Ohkubo, I., Kishimoto, S., Ohtomo, A., Fukumura, T., Matsukura, F., Ohno, Y., Koinuma, H., Ohno, H., and Kawasaki, M., Jpn. J. Appl. Phys., 42, L347 (2003).10.1143/JJAP.42.L347Google Scholar
3 Nakajima, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., and Hosono, H., Science 300, 1269 (2003).Google Scholar
4 Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., Nature 432, 488 (2004).10.1038/nature03090Google Scholar
5 Miyasako, T., Senoo, M., and Tokumitsu, E., Appl. Phys. Lett., 86, 162902 (2005).10.1063/1.1905800Google Scholar
6 Tokumitsu, E., Senoo, M. and Miyasako, T., J. of Microelectronic Engineering, 80, 305, (2005).10.1016/j.mee.2005.04.017Google Scholar
7 Yabuta, H., Sano, M., Abe, K., Aiba, T., Den, T., Kumomi, H., Nomura, K., Kamiya, T., and Hosono, H., Appl. Phys. Lett., 89, 112123 (2006).10.1063/1.2353811Google Scholar