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Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

Published online by Cambridge University Press:  11 February 2011

K. Nomura ,
H. Ohta ,
K. Ueda ,
T. Kamiya ,
M. Hirano  and
H. Hosono
K. Nomura
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
H. Ohta
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
K. Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan
T. Kamiya
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
M. Hirano
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
H. Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
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Abstract

Transparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V2.6
Copyright
Copyright © Materials Research Society 2003

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References

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