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Fabrication of patterned domains with graphitic clusters in amorphous carbon using a combination of ion implantation and electron irradiation techniques

Published online by Cambridge University Press:  26 February 2011

Eiji Iwamura
Affiliation:
iwamura@arakawachem.co.jp, PRESTO, Japan Science and Technology Agency, Arakawa Chemical Industries, Ltd.,, 1-1-9 Tsurumi, Tsurumi-ku, Osaka, Osaka, 539-0053, Japan, +81-6-6939-9694, +81-6-6939-1602
Tatsuhiko Aizawa
Affiliation:
aizawa@asiaseed.org, University of Toronto, Department of Materials Science and Engineering
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Abstract

Fabrication of domains containing graphitic structures in amorphous carbon (a-C) films was demonstrated. Amorphous carbon thin films with 200 nm thickness were deposited on Si substrates by ion-beam sputtering. Iron atoms in a range from 4×1013 to 3.7×1016 cm-2 were doped to the a-C films by an ion implantation technique through a nickel mask with a grid of square windows of 500×500 μm and a net of 50 μm in width as a template. After removing the metal mask, the partly Fe-containing a-C films were exposed to a low-energy electron shower. In the regions where Fe atoms were implanted, Fe were crystallized and preferably diffused toward the film surface leaving graphitic structures more than 10 nm in size in the interior of the amorphous carbon films. On the other hand, the masked regions, where Fe atoms were not implanted, remained amorphous. The results suggest that regions, which consist of amorphous domains and graphitic domains, can be intentionally arranged in a-C thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 Ugarte, D., Nature 359, 707709 (1992).Google Scholar
2 Chhowalla, M., Ahrronov, R. A., Kiely, C. J., Alexandrou, I. , I and Amaratunga, G. A. J., Philosophical Magazine Lett. 75, 329335 (1997).Google Scholar
3 Lavrentiev, V., Abe, H., Yamamoto, S., Naramoto, H. and Narumi, K., Physica B 323, 303305 (2002).Google Scholar
4 Fujita, J., Ishida, M., Ichihashi, T., Ochiai, Y., Kaito, T. and Matsui, S., J. Vac. Sci. Technol. B 20, 26862689 (2002).Google Scholar
5 Lee, C. S., Kim, T. Y., Lee, K. R., Ahn, J. P. and Yoon, K. H., Chem. Phys. Lett. 380, 774779 (2003).Google Scholar
6 Iwamura, E., Rev. Adv. Mater. Sci. 5, 3440 (2003).Google Scholar
7 Iwamura, E., Transactions of Materials and Heat Treatment 25, 12471252 (2004).Google Scholar
8 Iwamura, E., in Extended Abstract Inter. Conf. Carbon 2004, (Providence USA, July 11-16 2004.) (CD ROM)Google Scholar
9 Robertson, J., Materials Science and Engineering R 37, 129281 (2002).Google Scholar
10 Rouzaud, J. N. and Oberlin, A., Carbon 27, 517529 (1989).Google Scholar
11 Oberlin, A., Carbon 40, 724 (2002).Google Scholar