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Fabrication of Sol-Gel Derived Ferroelectric Plzt (9/65/35) Optical Waveguides

Published online by Cambridge University Press:  25 February 2011

P.F. Baude ,
C. Ye ,
T. Tamagawa  and
D.L. Polla
P.F. Baude
Affiliation:
Dept. of Electrical Engineering University of MN Minneapolis, Mn 55455
C. Ye
Affiliation:
Dept. of Electrical Engineering University of MN Minneapolis, Mn 55455
T. Tamagawa
Affiliation:
Dept. of Electrical Engineering University of MN Minneapolis, Mn 55455
D.L. Polla
Affiliation:
Dept. of Electrical Engineering University of MN Minneapolis, Mn 55455
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Abstract

Crack free transparent ferroelectric PLZT (9/65/35) thin films were deposited on silicon substrates using the sol-gel deposition technique. An intermediate layer of PLT was used to improve the PLZT's optical quality and to reduce the amount of film cracking. Wet chemical, plasma and reactive ion etching are investigated as means of realizing the necessary waveguide structures. Waveguiding is observed in 2-4mm long PLZT (9/65/35) fabricated by reactive ion beam etching.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 275
Copyright
Copyright © Materials Research Society 1992

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References

[1] Haertling, G.H. and Land, C.E., J. Am. Ceram. Soc., 54, 1, (1971)Google Scholar
[2] Mukherjee, A., Brueck, S.R.J., Wu, A.Y., Optics Lett., 15,151, (1990)Google Scholar
[3] Higashino, H., Kawaguchi, T., Adachi, H., Makino, T.,and Yamazaki, O., Proc. 6th Int. Mtg on Ferroelectricity, Jap. J. Appl. Phys, 24, 284 (1985)Google Scholar
[4] Wu, A.Y., Wang, F., Juang, C., and Bustamante, C., Mat. Res. Symp. Proc., 200, 261, (1990)Google Scholar
[5] Wegner, A., Brueck, S.R.J., and Wu, A.Y., Ferroelectrics, 116, 195 (1991)Google Scholar
[6] Oikawa, M. and Toda, K., Appl. Phys. Lett. 29, 491 (1976)Google Scholar
[7] Castellano, R.N. and Feinstein, L.G., J. Appl. Phys, 50, 4406, (1979)Google Scholar
[8] Swartz, S.L., Bright, S.J., Melling, P.J., and Shrout, T.R., Ferroelectrics, 108, 71, (1990)Google Scholar
[9] Budd, K. D., Dey, S.K., and Payne, D.A., Br. Ceram. Proc., 36, 107, (1985)Google Scholar
[10] Fukushima, J., Kodaira, K., and Matsushita, T., J. Mat. Sci., 19, 595, (1984)Google Scholar
[11] Seth, V. K. and Schulze, W. A., Ferroelectrics, 112, 283, (1990)Google Scholar
[12] Ye, C., Tamagawa, T., Lin, Y., and Polla, D.L., Mat. Res. Symp. Proc., Fall 1991 Meeting, to be publishedGoogle Scholar
[13] Swartz, S.L., Ramamurthi, S.D., Busch, J.R., and Wood, V.E., Mat. Res. Symp. Proc., Fall 1991, to be publishedGoogle Scholar
[14] Haertling, G. H., Ferroelectrics, 75, 25, (1987)Google Scholar
[15] Poor, M.R., Hurd, A.M., Fleddermann, C.B., and Wu, A.Y., Mat. Res. Soc. Symp. Proc., 200, 1990 Google Scholar