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Fast GaAs Photoconductor Responses to Subnanosecond Proton Pulses

Published online by Cambridge University Press:  21 February 2011

B. Brullot ,
R. Galli ,
X. Lecat ,
C. Rubbelynck  and
T. Pochet
B. Brullot
Affiliation:
Centre d'Etudes Nucléaires, DAM/CEM, B.P. 12, 91680 Bruyère-le-Chatel, France
R. Galli
Affiliation:
Centre d'Etudes Nucléaires, DAM/CEM, B.P. 12, 91680 Bruyère-le-Chatel, France
X. Lecat
Affiliation:
Centre d'Etudes Nucléaires, DAM/CEM, B.P. 12, 91680 Bruyère-le-Chatel, France
C. Rubbelynck
Affiliation:
Centre d'Etudes Nucléaires, DAM/CEM, B.P. 12, 91680 Bruyère-le-Chatel, France
T. Pochet
Affiliation:
LETI (CEA-Technologies Avancées), DEIN/SPE, Centre d'Etudes Nucléaires de Saclay, 91191 Gif-sur-Yvette Cedex, France
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Abstract

GaAs photoconductors -have been tailored to detect ultrafast proton pulses having energies ranging between 4 and 9 MeV. The sensitivity, the linearity and the speed of response of the devices are analyzed as a function of their neutron pre-irradiation treatment. The dependence of the sensitivity on the proton energy and the applied polarization is also studied. Finally, the experimental results are compared with a simple theoretical model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 369
Copyright
Copyright © Materials Research Society 1993

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References

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