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Femtosecond Time Domain Techniques for Characterization of Linear and Nonlinear Optical Properties in GaAs Waveguides

Published online by Cambridge University Press:  21 February 2011

K. K. Anderson ,
M. J. Lagasse ,
H. A. Haus  and
J. G. Fujimoto
K. K. Anderson
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
M. J. Lagasse
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
H. A. Haus
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
J. G. Fujimoto
Affiliation:
Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Femtosecond time domain measurements can provide a powerful approach for characterizing both the nonlinear as well as linear optical properties of waveguide devices. We describe a new time division interferometry technique to perform direct measurements of the nonresonant nonlinear index of refraction in AIGaAs waveguides. In addition, femtosecond time of flight measurements permit linear properties such as absorption and dispersion to be characterized using time domain techniques. These techniques permit a comprehensive characterization of linear and nonlinear waveguide properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 51
Copyright
Copyright © Materials Research Society 1990

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