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Ferroelectric Random Access Memory as a Non-Volatile Cache Solution in a Multimedia Storage System

Published online by Cambridge University Press:  01 February 2011

Dong Jin Jung  and
Kinam Kim
Dong Jin Jung
Affiliation:
djjung@samsung.comdjun01@gmail.com, Samsung Electronics Co. LTD., Memory Business Division, Hwasung, Korea, Republic of
Kinam Kim
Affiliation:
kn_kim@samsung.com, Samsung Electronics Co. LTD.,, Memory Business Division, Hwasung, Korea, Republic of
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Abstract

We demonstrate that ferroelectric memory is very eligible to become a non-volatile cache solution, in particular, in a multimedia storage system such as solid-state disk. It could provide benefits both of performance and of reliability. In performance, a FRAM cache allows us to rid overhead of power-off recovery. Random WRITE performance has been improved by 250%. In assertion of endurance, we investigate acceleration factors to evaluate cycle-to-failure of the ferroelectric memory both in device-level and in capacitor-level. What has been found is that ferroelectric memory cells have 6.0×1014 of the cycle-to-failure at the operational condition of 85 o C and 2.0V. This cycle-to-failure is well above lifetime READ/WRITE cycles of 9.5×1013 in such system. From 2-dimensional stress simulation, it has also been concluded that the number of dummy cells plays a critical role in qualifying the high temperature life tests.

Keywords

ferroelectricmemoryfatigue
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1129: Symposium V – Materials and Devices for Smart Systems III , 2008 , 1129-V10-01-C08-01
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

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