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Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

Published online by Cambridge University Press:  25 February 2011

H. Wang ,
L. W. Fu ,
S. X. Shang ,
S. Q. Yu ,
X. L. Wang ,
Z. K. Lu  and
M.H. Jiang
H. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
L. W. Fu
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
S. X. Shang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
S. Q. Yu
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
X. L. Wang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
Z. K. Lu
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
M.H. Jiang
Affiliation:
Institute of Crystal Materials, Shandong University, Jinan, 250100, P.R.China
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Abstract

The ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 243: Symposium G – Ferroelectric Thin Films II , 1991 , 213
Copyright
Copyright © Materials Research Society 1992

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References

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