Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-22T23:21:07.610Z Has data issue: false hasContentIssue false
  • English
  • Français

Film Properties of High-Performance FSG Films

Published online by Cambridge University Press:  15 March 2011

T. Yoda ,
H. Miyajima ,
K. Fujita ,
R. Nakata  and
Y. Nishiyama
T. Yoda
Affiliation:
Advanced ULSI Process Engineering Department Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
H. Miyajima
Affiliation:
Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
K. Fujita
Affiliation:
Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
R. Nakata
Affiliation:
Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Y. Nishiyama
Affiliation:
Toshiba Corporation, Semiconductor Company, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
Get access

Abstract

An advanced FSG film of k=3.4 was developed, which exhibited excellent resistance for moisture absorption. Physical and chemical properties of this advanced FSG film were compared by typical FSG films deposited in both high density plasma (HDP) and PE-CVD reactors, for the same k value.

The advanced FSG film appears to be superior to the HDP-FSG film by a wide margin in the following tests. The moisture absorption rate by TDS (after 4 days of air exposure) is about 5 times lower, the hardness was 1.8 times more, and the hygroscopicity (after 1 hr. boiling) was 2.6 times lower.

We conclude that these differences are mainly due to the unique film structure of the advanced FSG film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A10.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Barth, E. P. et al. , Proceedings of IITC 2000, 219 Google Scholar
2. Wistrom, R., Bomberger, G., Lavoie, M., Gambino, J., Poley, O.., DUMIC Proceedings, 217 (2000)Google Scholar
3. Lim, S., Shimogaki, Y., Nakano, Y., Tada, K., and Komiyama, H., J. Electrochem. Soc. 146, (1999) 4196 Google Scholar
4. Yoshimaru, M., Koizumi, S., Shimokawa, K., J. Vac. Sci. Technol. A 15, 2908 (1997)Google Scholar
5. , Boek, Angyal, M., Filipiak, S., Rogers, B., Electrochemical Society Proceedings, Vol.98–3, 18 Google Scholar
6. Wistrom, R., Bomberger, G., Cohen, S., Hazel, S., Lavoie, M., Gambino, J., Poley, D., and Documaci, O.., Proceedings of IITC 2001,168 Google Scholar
7. Martin, J. S. et al. , Proceedings of IITC 2001,39Google Scholar