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First-principles study of defects and carrier compensation in semiconductor radiation detector materials

Published online by Cambridge University Press:  31 January 2011

Mao-Hua Du ,
Hiroyuki Takenaka  and
David Joseph Singh
Mao-Hua Du
Affiliation:
mhdu@ornl.gov, Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, Tennessee, United States
Hiroyuki Takenaka
Affiliation:
takenaka@ornl.gov, Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States
David Joseph Singh
Affiliation:
singhdj@ornl.gov, Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, Tennessee, United States
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Abstract

We discuss defect engineering strategies in radiation detector materials. The goal is to increase resistivity by defect-induced Fermi level pinning without causing defect-induced reductions in the carrier drifting length. We show calculated properties of various intrinsic defects and impurities in CdTe. We suggest that the defect complex of a hydrogen atom and an isovalent impurity on an anion site may be an excellent candidate in many semiconductors for Fermi level pinning without carrier trapping.

Keywords

defectsdopantII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1164: Symposium L – Nuclear Radiation Detection Materials–2009 , 2009 , 1164-L08-02
Copyright
Copyright © Materials Research Society 2009

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