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Flexible Pentacene/PMMA Thin-Film Transistors Fabricated on Aluminium Foil Substrates

Published online by Cambridge University Press:  01 February 2011

J. Puigdollers ,
C. Voz ,
M. Fonrodona ,
I. Martín ,
A. Orpella ,
M. Vetter  and
R. Alcubilla
J. Puigdollers
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
C. Voz
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
M. Fonrodona
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
I. Martín
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
A. Orpella
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
M. Vetter
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
R. Alcubilla
Affiliation:
MNT, Universitat Politècnica de Catalunya, C/ Jordi Girona 1-3. Mòdul C4. Barcelona-08034. Spain
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Abstract

Pentacene thin-film transistors (TFT) were fabricated on aluminum foils using polymethyl methacrylate (PMMA) as gate dielectric. In such structure, the aluminum substrate acts as the gate electrode itself. A bottom gate inverted structure was used to study the influence of the dielectric and the aluminum substrate on the device performance.

Pentacene thin-films were deposited by thermal evaporation in high-vacuum at deposition rates around 3 Ås-1 and three different substrate temperatures (30, 60 and 90°C). The maximum process temperature achieved was 170°C, corresponding to the baking of polymethyl methacrylate. The TFTs exhibit field-effect mobility values of ∼ 10-3 cm2V-1s-1 and threshold voltage values around –15 V. The influence of the dielectric and the substrate temperature on the pentacene structure and device field-effect mobility is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I9.9
Copyright
Copyright © Materials Research Society 2005

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