Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-13T02:19:58.275Z Has data issue: false hasContentIssue false

Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section Tem Specimen Preparation

Published online by Cambridge University Press:  10 February 2011

L. A. Giannuzzi
Affiliation:
Department of Mechanical, Materials, and Aerospace Engineering, University of CentralFlorida, PO Box 162450, 4000 Central Florida Blvd., Orlando, FL 32816-2450
J. L. Drown
Affiliation:
Department of Mechanical, Materials, and Aerospace Engineering, University of CentralFlorida, PO Box 162450, 4000 Central Florida Blvd., Orlando, FL 32816-2450
S. R. Brown
Affiliation:
Kirk Resources, 9333 S. John Young Parkway, Orlando, FL 32819
R. B. Irwin
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL 32819
F. A. Stevie
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL 32819
Get access

Abstract

A site specific technique for cross-section transmission electron microscopy specimen preparation of difficult materials is presented. Focused ion beams are used to slice an electron transparent sliver of the specimen from a specific area of interest. Micromanipulation lift-out procedures are then used to transport the electron transparent specimen to a carbon coated copper grid for subsequent TEM analysis. The experimental procedures are described in detail and an example of the lift-out technique is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Harriott, L. R., Appl. Surf. Sci. 36, 432 (1989)Google Scholar
2. Nikawa, K., Nasu, K., Murase, M., Kaito, T., Adachi, T., and Inoue, S., IEEE/IRPS Proc., p. 43 (1989).Google Scholar
3. Lange, J. A. and Allen, C., SPIE Proc. 1465, 50 (1991).Google Scholar
4. Mantusiewicz, G. R., Kirch, S. J., and Seeley, V. J., IEEE/IRPS Proc., p. 167 (1991).Google Scholar
5. Lindquist, J. M., Young, R. J., and Jaehing, M. C., Microelectron. Eng. 21, 179 (1993).Google Scholar
6. Bannerjee, I. and Livengood, R. H., J. Electrochem. Soc. 140, 183 (1993).Google Scholar
7. Stevie, F. A., Shane, T. C., Kahora, P. M., Hull, R., Bahnck, D., Kannan, V. C., and David, E., Surf. Interface Anal. 23, 61 (1995).Google Scholar
8. System specifications for FEI 200 and 800 Focused Ion Beam Workstations. FEI Company (USA), 7451 N.E. Evergreen Parkway, Hillsboro, Oregon, 97124–5830.Google Scholar
9. Kirk, E. C. G., Williams, D. A., and Ahmed, H., Inst. Phys. Conf. Ser. 100, 501 (1989).Google Scholar
10. Basile, D. P., Boylan, R., Baker, B., Hayes, K., and Soza, D., Mater. Res. Soc. Symp. Proc. 254, 23 (1992).Google Scholar
11. Szot, J., Hornsey, R., Ohnishi, T., and Minagawa, S., J. Vac. Sci. Technol. B 10, 575 (1992).Google Scholar
12. Tarutani, M., Takai, Y., and Shimizu, R., Jpn. J. Appl. Phys. 31, L1305 (1992).Google Scholar
13. Yamaguchi, A., Shibata, M., and Hashinaga, T., J. Vac. Sci. Technol. B 11, 2016 (1993).Google Scholar
14. Nakajima, K., Sudo, S., Yakushiji, M., Ishii, T., and Aoki, S., J. Vac. Sci. Technol. B 11, 2127 (1993).Google Scholar
15. Assayag, C. Ben, Vieu, C., Glerak, J., Sudraud, P., and Corbin, A., J. Vac. Sci. Technol. BI 1, 2420 (1993).Google Scholar
16. Tomikawa, T. and Shikata, S., Jpn. J. Appl. Phys. 32, 3938 (1993).Google Scholar
17. Assayag, C. Ben, Vieu, C., Gierak, J, Chaabane, H., Pepin, A., and Henoc, P., J. Vac. Sci. Technol. B 1, 531 (1993).Google Scholar
18. Overwijk, M. H. F., van den Heuvel, F. C., and Bulle-Lieuwma, C. W. T., J. Vac. Sci. Technol. BI 1, 2021 (1993).Google Scholar
19. Lange, J. A. and Czapski, S., 17ty Int. Symp. for Testing and Failure Analysis, ASM International, Materials Park, lOH, USA p.397 (1991).Google Scholar
20. Sanborn, C. E. and Meyers, S. A., Mater. Res. Soc. Symp. on Specimen Preparation for Transmission Electron Microscopy of Materials-Ill, Amer. Inst. Physics, NY, USA p.239 (1992).Google Scholar
21. Dickson, N., Miller, J., Jackson, M., Kohn, S., Pyle, R., and Tatti, S., SPIE Proc. 1802, 155 (1992).Google Scholar
22. Mendez, H., Morris, S., Tatti, S., Dickson, N., and Pyle, R. E., SPIE Proc. 1802, 126 (1992).Google Scholar
23. Black, E., Bridwell, J., and Mcconnell, R., SPIE Proc. 1802, 120 (1992).Google Scholar
24. Hull, R., Bahnck, D., Stevie, F. A., Koszi, L., and Chu, S. N. G., Appl. Phys. Lett. 62, 3408 (1993).Google Scholar
25. Hull, R., Stevie, F. A., and Bahnck, D., Mater Res. Soc. Symp. Proc. (1994).Google Scholar
26. Giannuzzi, L.A., Drown, J. L., Brown, S.R., Irwin, R.B., and Stevie, F. A., in press, J. Mat. Res.Google Scholar
27. Narishige Micromanipulator, Narishige USA, Inc., Sea Cliff, NY.Google Scholar