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Formation and Growth of Amorphous Phases by Solid-State Reactions Between Co Thin-Films and III-V Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

F.Y. Shiau  and
Y.A. Chang
F.Y. Shiau
Affiliation:
Department fo Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706
Y.A. Chang
Affiliation:
Department fo Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706
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Abstract

Solid-state amorphizaiton reactions (SSAR's) between Co thin-films and GaAs and InP have been investigated by transmission electron microscopy and Auger electron spectroscopy. Upon annealing at 260–300 °C, an amorphous phase was observed in the Co/GaAs system. Annealing at higher temperatures or for longer times led to the crystallization of this phase into a supersaturated CoAs structure. In the Co/InP system, annealing at 200°C for 1 hour led to the simultaneous formation of Co2P and an amorphous Co-In phase. At higher temperatures the amorphous phase crystallized into CoIn2 structure. For both systems, the amorphization reactions are attributed to the rapid diffusion of Co into the III-V substrates. The factors governing SSAR in ternary systems were discussed, with emphasis on the role of kinetics as opposed. to thermodynamic considerations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 89
Copyright
Copyright © Materials Research Society 1990

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