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Formation of a New Blue-Shift Emission in Highly Be-Doped GaAs Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

Yunosuke Makita ,
Masahiko Mori ,
Nobukazu Ohnishi ,
Paul Phelan ,
Takashi Taguchi ,
Yoshinobu Sugiyama  and
Munecazu Tacano
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, Umezono 1–1–4, Tsukuba-shi, Ibaraki-ken 305, Japan
Masahiko Mori
Affiliation:
Electrotechnical Laboratory, Umezono 1–1–4, Tsukuba-shi, Ibaraki-ken 305, Japan
Nobukazu Ohnishi
Affiliation:
Institute of Fundamental Analysis Co., LTD., Yoyogi 3–24–3, Shibuya-ku, Tokyo 151, Japan
Paul Phelan
Affiliation:
Electrotechnical Laboratory, Umezono 1–1–4, Tsukuba-shi, Ibaraki-ken 305, Japan
Takashi Taguchi
Affiliation:
Nippon Soken Inc. Co., Iwaya 14, Shimosumi, Nishio-shi, Aichi-ken 445, Japan
Yoshinobu Sugiyama
Affiliation:
Electrotechnical Laboratory, Umezono 1–1–4, Tsukuba-shi, Ibaraki-ken 305, Japan
Munecazu Tacano
Affiliation:
Electrotechnical Laboratory, Umezono 1–1–4, Tsukuba-shi, Ibaraki-ken 305, Japan
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Abstract

Photoluminescence measurements of Be-doped GaAs, grown by molecular beam epitaxy, were carried out at low temperature as a function of acceptor concentration. Results revealed that besides the well-defined emission, [g-g], which is exclusively relevant to acceptor impurities, an additional specific emission, temporarily denoted by [g-g]α is formed near the band-edge, when the concentration of acceptors exceeds 1×1019 cm−3:. From the viewpoint of application it was suggested that also in case of acceptors, photoluminescence spectra can be practically used for the precise determina-tion the acceptor concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 175
Copyright
Copyright © Materials Research Society 1988

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References

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