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Formation of Buried Ternary Silicide Layers in Silicon by Ion Beam Synthesis (IBS)

Published online by Cambridge University Press:  25 February 2011

D. Panknin ,
E. Wieser ,
W. Skorupa ,
G. Querner ,
H. Vöhse  and
J. Albrecht
D. Panknin
Affiliation:
Research Center Rossendorf Inc, PF 19, 0–8 051 Dresden, Germany
E. Wieser
Affiliation:
Research Center Rossendorf Inc, PF 19, 0–8 051 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc, PF 19, 0–8 051 Dresden, Germany
G. Querner
Affiliation:
Technical University Dresden
H. Vöhse
Affiliation:
Institute Fresenius, Dresden
J. Albrecht
Affiliation:
Institute Fresenius, Dresden
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Abstract

A buried (Fe1−xCox) Si2 (x < 0.2) layer was formed by two step high dose implantation of Fe and Co into {100}-Si with as well as without intermediate annealing between the implantations. The suicide layer remains semiconducting if the temperature of the post implantation annealing is lower than 850°C. The depth distribution of Fe and Co, the phase composition as well as the microstructure of the layer system was investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 111
Copyright
Copyright © Materials Research Society 1993

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References

[1] Corre, C. L. and Genin, J. M., Phys. Stat. Sol. B51, K85 (1972)Google Scholar
[2] Radermacher, K., Mantl, S., Apetz, R., Dieker, Ch., Lüth, H. Appl Phys. Lett. 59, 2145 (1991)Google Scholar
[3] Oostra, D. J., Vandenhoudt, D. E. W. and Bulle-Lieuwma, C. W. T. Appl Phys. Lett. 59, 1737 (1991)Google Scholar
[4] Panknin, D., Wieser, E., Grötzschel, R., Skorupa, W., Baither, D., Bartsch, H., Querner, G. and Danzig, H. Sci. Eng. B12, 119 (1992)Google Scholar
[5] Reuther, H., Wieser, E., Panknin, D., Grötzschel, R., Skorupa, W. and Querner, G. Nucl. Instr. Meth. B68, 241 (1992)CrossRefGoogle Scholar
[6] Hesse, J., Z. angew. Phys. 28, 133 (1969)Google Scholar
[7] Wieser, E., Panknin, D., Skorupa, W., Querner, G., Henrion, W., Albrecht, J. presented at the 1992 Ion Beam Modification of Materials (IBMM), Heidelberg, Germany, to be published in Nucl. Instr. Meth. BGoogle Scholar
[8] Panknin, D., Wieser, E., Skorupa, W., Vöhse, H. and Albrecht, J. presented at the 1992 Ion Beam Technology (IIT), Gainsville, USA to be published in Nucl Instr. Meth. BGoogle Scholar
[9] Panknin, D., Wieser, E., Wollschläger, K., Grötzschel, R., Skorupa, W. and Querner, G. to be published in Vacuum (1992)Google Scholar
[10] Radermacher, K., Mantl, S., Gerthsen, D., Dieker, Ch. and Lüth, H., presented at the 1992 Ion Beam Modification of Materials (IBMM), Heidelberg, Germany to be published in Nucl. Instr. Meth. BGoogle Scholar