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Formation of Oriented Conductive SrVO3-x(SVO) Films on Si(100) Substrates by Evaporation in Low-Pressure Hydrogen

Published online by Cambridge University Press:  21 February 2011

Tsunemasa Hayashi  and
Hiroshi Ishiwara
Tsunemasa Hayashi
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
Hiroshi Ishiwara
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
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Abstract

Conductive SrVO3-x films are deposited directly on Si(100) substrates by vacuum evaporation method using SrVO3-x as a source material. It has been found that the conductive film was strongly oriented to only <100> direction on Si(100). By introducing hydrogen, the resistivity of the SrVO3-x film decreases to 0.57mΩcm, which is smaller than those of samples deposited without hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 67
Copyright
Copyright © Materials Research Society 1993

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References

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