Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-28T10:18:46.375Z Has data issue: false hasContentIssue false
  • English
  • Français

The Formation of Porous Silicon and its Applications to Dielectric Isolation

Published online by Cambridge University Press:  21 February 2011

R. C. Frye
R. C. Frye*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
Get access

Abstract

Porous silicon is formed by the anodic dissolution of p-type silicon in aqueous hydrofluoric acid. Because of its very high porosity, this material can be rapidly cKidized to form thick (˜10 μn) oxide layers with minimal stress on the underlying silicon wafer. A remarkable property of porous silicon is that preserves the crystalline orientation of the substrate despite removal of more than half of the silicon in the etched region, providing a suitable surface for the growth of epitaxial layers. Several schemes for dielectric isolation have been suggested which take advantage of these unique properties. In this paper, the mechanism of porous silicon formation will be presented and the relative advantages and disadvantages for practical device applications will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 53
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Uhlir, A., Jr., Bell Syst. Tech. J. 5, 333 (1956).CrossRefGoogle Scholar
2. Turner, D. R., J. Electrochem. Soc. 105 402 (1958).10.1149/1.2428873CrossRefGoogle Scholar
3. Memming, R. and Schwandt, G., Surf. Sci. 4. 109 (1966).10.1016/0039-6028(66)90071-9CrossRefGoogle Scholar
4. Beckmann, K. H., Surf. Sci. 1, 314 (1965).CrossRefGoogle Scholar
5. Arita, Y., Kuranari, K. and Sunchara, Y., Japan J. Appl. Phys. It 1655 (1976).Google Scholar
6. Yamanaka, H., Sakamoto, M. and Hamano, K., Japan J. Appl. Phys. 14, 303 (1975).10.1143/JJAP.14.303CrossRefGoogle Scholar
7. Watanabe, Y. and Sakai, T., Rev. Elec. Comm. Lab. 19 899 (1971).Google Scholar
8. Arita, Y., Jour. Cryst. Growth 45, 383 (1978).CrossRefGoogle Scholar
9. Labunov, V., Baranov, I. and Bondarenko, V., Thin Solid Films 64,479 (1979).10.1016/0040-6090(79)90335-3CrossRefGoogle Scholar
10. Arita, Y. and Sunohara, Y., J. Electrochem. Soc. 124 285 (1977).10.1149/1.2133281CrossRefGoogle Scholar
11. Imai, K. and Yoriume, Y., Japan J. Appl. Phys. 18. 281 (1979)10.7567/JJAPS.18S1.281CrossRefGoogle Scholar
12. Unagami, T., J. Electrochem. Soc. 12 476 (1980).10.1149/1.2129690CrossRefGoogle Scholar
13. Goodwin, C.A, Bell Labs internal memorandum (unpublished).Google Scholar
14. Unagami, T. and Seki, M., J. Electrochem. Soc. 12. 1339 (1978).CrossRefGoogle Scholar
15. Watanabe, Y., Arita, Y., Yokoyama, T. and Igarashi, Y., J. Electrochem. Soc. 22 1351 (1975).10.1149/1.2134015CrossRefGoogle Scholar
16. Hamano, K., Sakamoto, M. and Yamanaka, H., Japan J. Appl. Phys. 14, 413 (1975).CrossRefGoogle Scholar
17. Imai, K. and Yashiro, T., Japan J. Appl. Phys. 15,553 (1976).CrossRefGoogle Scholar
18. Unagami, T., Japan J. Appl. Phys. 12, 231 (1980).CrossRefGoogle Scholar
19. Bellin, P. H. and Zwicker, W. K., J. Appl. Phys. 42, 1216 (1970).CrossRefGoogle Scholar
20. Theunissen, M. J. J., I. Electrochem. Soc., 11 351 (1972).CrossRefGoogle Scholar
21. Hil, M. J., J. Electrochem. Soc. 120. 142 (1973).10.1149/1.2403389CrossRefGoogle Scholar
22. Dijk, H. J. A. van and Jonge, J. de, J. Electrochem. Soc. 117.553 (1970).10.1149/1.2407568CrossRefGoogle Scholar
23. Meek, R. L., J. Electrochem. Soc. 118 437 (1971).10.1149/1.2408076CrossRefGoogle Scholar
24. Arita, Y., Kato, K. and Sudo, T., IEF Trans. Elect. Dev. EM-24, 756 (1977).10.1109/T-ED.1977.18816CrossRefGoogle Scholar
25. Kuranari, K. and Arita, Y., Japan J. Appl. Phys. 15, 2279 (1976).10.1143/JJAP.15.2279CrossRefGoogle Scholar
26. Uwtgami, T. and Kato, K., Japan J. Appl. Phys., 16 1635 (1977).Google Scholar
27. Imd, K., Solid-State Electron. 24, 159 (1980).Google Scholar
28. Baumgart, H., Frye, R. C., Phillipp, F. and Leamy, H. J., these proceedings.Google Scholar
29. Teng, T. C., J. Electrochem. Soc. 126 870 (1979).CrossRefGoogle Scholar