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The Formation of Porous Silicon Layers Formed in a Non-Aqueous Electrolyte

Published online by Cambridge University Press:  28 February 2011

Melissa M. Rieger  and
Paul A. Kohl
Melissa M. Rieger
Affiliation:
Georgia Institute of Technology, Atlanta, Georgia 30332-0100
Paul A. Kohl
Affiliation:
Georgia Institute of Technology, Atlanta, Georgia 30332-0100
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Abstract

The formation of porous silicon layers was examined with respect to crystal orientation and the presence of water. Unlike the etching of (111) silicon in aqueous HF solutions, no pores were formed in HF-MeCN. The etching of (111) silicon in HF-MeCN resulted in the formation of triangular pits defined by the {111} planes. A mechanism for the etching is proposed where steric hindrance of the surface terminated hydrogens induces bond strain and enhances the chemical reactivity. The mechanism also accounts for the formation of pores in (100) silicon, and the formation of a highly branched microporous structure when silicon is etched in an aqueous solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 339
Copyright
Copyright © Materials Research Society 1995

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References

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