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Formation of thallium antimony sulfide and thallium bismuth sulfide thin films by heating chemically deposited multi-layer thin films

Published online by Cambridge University Press:  01 February 2011

Verónica Estrella ,
M. T. S. Nair  and
P. K Nair
Verónica Estrella
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos-62580, México; pkn@cie.unam.mx
M. T. S. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos-62580, México; pkn@cie.unam.mx
P. K Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México Temixco, Morelos-62580, México; pkn@cie.unam.mx
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Abstract

Antimony sulfide (Sb2S3) and bismuth sulfide (Bi2S3) thin films of 200 nm thickness each were deposited from aqueous baths on glass substrates. Subsequently, thin films of thallium sulfide (Tl2S) with thickness around 120 nm were deposited on to these films from a bath containing thallium nitrate, sodium citrate, sodium hydroxide and thiourea. The multilayer films of Sb2S3-Tl2S, Bi2S3-Tl2S and Bi2S3-Sb2S3-Tl2S, thus produced, were heated in a nitrogen atmosphere around 300°C. XRD studies confirmed the formation of TlSbS2, TlBiS2, Tl4Bi2S5 and TlSb3S5 compounds. Optical band gaps of these materials are 1.85 eV (TlSbS2), 0.15 eV (TlBiS2), and about 1 eV for the composite film (Tl4Bi2S5 + TlSb3S5). In the visible spectral region, the optical absorption coefficients of these materials are about 105 cm-1. Values of dark conductivity are 10-7 Ωcm-1 (TlSbS2), 10-4 Ωcm-1 for TlBiS2 and 10-6 Ωcm-1 for the composite film. All the films are photoconductive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K9.10
Copyright
Copyright © Materials Research Society 2002

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