Hostname: page-component-6bf8c574d5-xtvcr Total loading time: 0 Render date: 2025-02-22T20:36:54.186Z Has data issue: false hasContentIssue false
  • English
  • Français

Formation of Well-Separated Buried and Surface Nickel-Silicide Layers in a Single Ion Implantation Step

Published online by Cambridge University Press:  25 February 2011

M. F. Wu ,
J. De Wachter ,
P. Hendrickx ,
H. Pattyn ,
A. M. Van Bavel ,
G. Langouche ,
J. Vanhellemont ,
H. Bender ,
M. Maenhoudt  and
Y. Bruynseraede
M. F. Wu
Affiliation:
Department of Technical Physics, Peking University, Beijing, PR China
J. De Wachter
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
P. Hendrickx
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
H. Pattyn
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
A. M. Van Bavel
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut voor Kern-en Stralingsfysika, University of Leuven, B-3001 Leuven, Belgium
J. Vanhellemont
Affiliation:
Interuniversity Microelectronics Center, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
Interuniversity Microelectronics Center, Kapeldreef 75, B-3001 Leuven, Belgium
M. Maenhoudt
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
Y. Bruynseraede
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, University of Leuven, B-3001 Leuven, Belgium
Get access

Abstract

An unusual Ni distribution with two completely separated buried and surface suicide layers has been observed after Ni ion implantation in Si(111) kept at a temperature of 300° C, with a dose of 1.1 × 1017/cm2 and at a fixed energy of 90 keV. RBS/channeling, AES and cross-sectional TEM have been used to study this phenomenon as a function of the substrate temperature and Co co4mplantation. A model is presented, based on the diffusion of the transition metal, the defect annealing during the implantation, and the gettering power of the surface and the end of range defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 899
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. White, A. E., Short, K. T., Dynes, R. C., Garno, J. P. and Gibson, J. M., Appl. Phys. Lett. 50, 95 (1987); Mater. Res. Soc. Symp. Proc. 74, 481 (1987).Google Scholar
2. Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G., Maex, K., Vanhellemont, J., Vanacken, J., Vloeberghs, H. and Bruynseraede, Y., Nud. Instrum. Methods B 45, 658 (1990).Google Scholar
3. Barbour, J. C., Picraux, S. T. and Doyle, B. L., Mater. Res. Soc. Symp. Proc. 107, 269 (1988).Google Scholar
4. Kohlhof, K., Mantl, S., Strizker, B. and Jager, W., Nud. Instrum. Methods B 39, 276 (1989).Google Scholar
5. van Ommen, A. H., Ottenham, J. J. M., Theunissen, A. M. L. and Mouwen, A. G., Appl. Phys. Lett. 53, 669 (1988).Google Scholar
6. Tung, R. T., Hellman, F., Gibson, J. M. and Boone, T., Mater. Res. Soc. Symp. Proc. 91, 451 (1987).Google Scholar
7. d'Heurle, F.M., Anfiteatro, D. D., Deline, V. R. and Finstad, T. G., Thin Solid Films 128, 107 (1985).Google Scholar
8. Finstad, T. G., Anfiteatro, D. D., Deline, V. R., d'Heurle, F. M., Gas, P., Moruzzi, V.L., Schwarz, K. and Tersoff, J., Thin Solid Films 135, 229 (1986).Google Scholar
9. White, A. E., Short, K. T., Dynes, R. C., Gibson, J. M. and Hull, R., Mater. Res. Soc. Symp. Proc. 100, 3 (1988).Google Scholar
10. Wu, M. F., Vantomme, A., Langouche, G., Maex, K. and Vanhellemont, J., Crystal Properties and Preparation 32–34, 169 (1991).Google Scholar
11. Wu, M. F., Vantomme, A., Langouche, G., Maex, K., Vanderstraeten, H. and Bruynseraede, Y., Appl. Phys. Lett. 57, 1973 (1990).Google Scholar
12. Doolittle, L. R., Nucl. Instrum. Methods B 9, 344 (1985).Google Scholar
13. Seibt, M. and Schröter, W., Solid State Phenomena 19/20, 283 (1991).Google Scholar
14. Utzig, J. and Gilles, D., Materials Science Forum 38/41, 729 (1989).Google Scholar
15. Weber, E. R., Appl. Phys. A 30, 1 (1983).Google Scholar
16. Wu, M. F., De Wachter, J., Hendrickx, P., Pattyn, H., Van Bavel, A. M., Langouche, G., Vanhellemont, J., Bender, H., Maenhoudt, M. and Bruynseraede, Y., accepted for publication in Applied Physics Letters.Google Scholar
17. Lindner, J. K. N., Klassen, T. and te Kaat, E. H., Nucl. Instrum. Methods B 59/60, 655 (1991).Google Scholar
18. Lindner, J. K. N. and te Kaat, E. H., J. Mater. Res. 3, 1238 (1988).Google Scholar