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Formation of ZnAl2O4 and MgAl2O4 Spinel in Al2O3 by Ion Implantation

Published online by Cambridge University Press:  15 February 2011

C.W. White ,
A. Meldrum ,
E. Sonder ,
J.D. Budai ,
R.A. Zuhr ,
S.P. Withrow  and
D.O. Henderson
C.W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057
A. Meldrum
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057
E. Sonder
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057
J.D. Budai
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057
R.A. Zuhr
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057
S.P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831-6057
D.O. Henderson
Affiliation:
Fisk University, Nashville, TN 37208
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Abstract

ZnAl2O4 spinel has been formed in Al2O3 by ion implantation. Sequential implantation of Zn and 0 in overlapping profiles followed by annealing in Ar + H2 gives rise to a nearly continuous epitaxial layer of ZnAl2O4 oriented with (111) planes parallel to (0001) planes of Al2O3. If only Zn is implanted, then discrete bands of ZnAl2O4 oriented with (422) planes parallel to (0001) planes of Al2O3 are produced. By similar methods, oriented MgAl2O4 spinel also has been produced in Al2O3 by sequential Mg + O implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 219
Copyright
Copyright © Materials Research Society 1999

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