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Fundamental Studies of TiN Film Growth by CVD From Ti(N M e2)4 and Ammonia

Published online by Cambridge University Press:  22 February 2011

J. A. Prybyla ,
C.-M. Chiang  and
L. H. Dubois
J. A. Prybyla
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C.-M. Chiang
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
L. H. Dubois
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

TiN films were grown by CVD from Ti(N M e2)4 and ammonia using a novel gas delivery system which allowed the sample to be kept in high vacuum while the reactants were mixed at elevated pressures. The object was to study fundamental chemistries and growth properties. We obtained clean (<5% carbon), near-stoichiometric (Ti:N = 1.15+/-0.1) TiN films. The gas phase chemistry was studied by mass spectrometry while the films were analyzed in situ by Auger electron spectroscopy (AES), and then removed for Rutherford backscattering (RBS) analysis. Film quality was studied as a functionof reactant ratio, substrate temperature, and reactant gas pressure. We obtained definitive information on the growth mechanism. Isotopic substituiton experiments establish that a rapid transami-nation reaction occurs in the gas phase. Mass spectrometry experiments indicate that the reactive intermediate is polymeric, consisting of Ti, N, H, arid perhapscarbon. Growth on patterned wafers shows that this intermediate has a high sticking coefficient and a low surface mobility at 300°C. These findings are considered in terms ofthe potential of this precursor system to be used in manufacturing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 287
Copyright
Copyright © Materials Research Society 1993

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References

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