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Fundamentals of Semiconductor Detectors for Ionizing Radiation

Published online by Cambridge University Press:  21 February 2011

G.F. Knoll  and
D.S. Mcgregor
G.F. Knoll
Affiliation:
The Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109-2104
D.S. Mcgregor
Affiliation:
The Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109-2104
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Abstract

The modes of operation of semiconductor detectors are reviewed, together with the influence of charge carrier collection in developing a signal pulse for spectroscopic applications. Because of the importance of charge trapping in many semiconductors of interest in the fabrication of room temperature radiation detectors, the effects of incomplete charge collection are quantified. Calculated results are presented for the expected pulse height and energy resolution under a variety of charge collection conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 3
Copyright
Copyright © Materials Research Society 1993

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References

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