Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-22T08:21:15.120Z Has data issue: false hasContentIssue false
  • English
  • Français

GaAs MESFET's on Silicon Substrates for Digital IC Applications

Published online by Cambridge University Press:  25 February 2011

Hisashi Shichijo  and
Jhang Woo Lee
Hisashi Shichijo
Affiliation:
Texas Instruments Incorporated, P.O. Box 225936, Dallas, TX 75265
Jhang Woo Lee
Affiliation:
Texas Instruments Incorporated, P.O. Box 225936, Dallas, TX 75265
Get access

Abstract

The characteristics of GaAs MESFETs in GaAs-on-Si have been studied in detail for digital IC applications. The device structure utilizes GaAs and AlGaAs undoped buffer layers grown on a 3 degrees off (100) silicon substrate by MBE. The threshold voltage of the MESFET is adjusted by recessing the gate.

The maximum observed transconductance of 135 mS/mm is comparable to what is expected from the bulk GaAs device with the same parameters. The device also shows good pinch-off characteristics. Both enhancement and depletion mode MESFETs have been fabricated.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 173
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Morkoc, H., Peng, C.K., Henderson, T., Kopp, W., Fisher, R., Erickson, L.P., Longerbone, M.D., and Youngman, R.C., IEEE Elect. Dev. Lett. EDL–6, 381 (1985).Google Scholar
2. Fisher, R., Masselink, W.T., Klein, J., Henderson, T., McGlinn, T.C., Klein, M.V., Morkoc, H., Mazur, J.H., and Washburn, J., J. Appl. Phys. 58, 374 (1985).Google Scholar
3. Lee, J.W., this meeting.Google Scholar
4. McLevige, W.V. and Chang, C.T.M., Technical Digest of 1985 GaAs IC Symposium, p.203 (1985).Google Scholar
5. Kaminishi, K. and Akiyama, M., Nikkei Microdevices (in Japanese), p.113 (1986).Google Scholar