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GaAs Photodetector for X-ray Imaging

Published online by Cambridge University Press:  21 March 2011

G. C. Sun ,
H. Samic ,
V. Donchev ,
S. Gautrot  and
J. C. Bourgoin
G. C. Sun
Affiliation:
Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie, CNRS (UMR 7603), Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France
H. Samic
Affiliation:
Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie, CNRS (UMR 7603), Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France Department of Physics, University of Sarajevo, Saobracajni Fakultet, Zmaja od Bosne 10, 71000 Sarajevo, Bosnia & Hertzegovina
V. Donchev
Affiliation:
Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie, CNRS (UMR 7603), Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France Department of Condensed Matter Physics, Sofia University, 5, blvd. James Bourchier, 1164-Sofia, Bulgaria
S. Gautrot
Affiliation:
Centre de Spectrometrie Nucléiare et Spectrometrie de Masse, Bat. 108, Université Paris-Sud, 91405 Orsay, Paris, France
J. C. Bourgoin
Affiliation:
Laboratoire des Milieux Désordonnés et Hétérogènes, Université Pierre et Marie Curie, CNRS (UMR 7603), Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France
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Abstract

We describe briefly a cheap and non polluting technique to grow epitaxial GaAs layers, several hundred microns thick, in a matter of hour. Detectors consisting of a p+/i/n+ structure have been realised with these layers and we present their characteristics obtained from currentvoltage, capacitance-voltage measurements as well as their response versus the energy and flux of X-rays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H4.5.1
Copyright
Copyright © Materials Research Society 2002

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