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GaAs Pixel Detectors

Published online by Cambridge University Press:  12 November 2013

A. Tyazhev
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
D. Budnitsky
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
D. Mokeev
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
V. Novikov
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
A. Zarubin
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
O. Tolbanov
Affiliation:
Tomsk State University, 634050, Tomsk, Russia.
G. Shelkov
Affiliation:
Joint Institute for Nuclear Research, 141980, Dubna, Russia.
E. Hamann
Affiliation:
FMF, Albert-Ludwigs-University Freiburg, 79104, Freiburg, Germany. IPS, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany.
A Fauler
Affiliation:
FMF, Albert-Ludwigs-University Freiburg, 79104, Freiburg, Germany.
M. Fiederle
Affiliation:
FMF, Albert-Ludwigs-University Freiburg, 79104, Freiburg, Germany. IPS, Karlsruhe Institute of Technology, 76344, Eggenstein-Leopoldshafen, Germany.
S. Procz
Affiliation:
FMF, Albert-Ludwigs-University Freiburg, 79104, Freiburg, Germany.
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Abstract

Results of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in this work. HR GaAs material is shown to have the following physical parameters: the resistivity about 1GOhm*cm, the nonequilibrium charge carrier lifetime – hundreds of nanoseconds. Prototypes of microstrip and array HR GaAs sensors have been manufactured and tested. It is demonstrated that the sensors provide spatial resolution according to the pixel pitch and allow obtaining high quality X-ray images.

Type
Articles
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

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