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GaAsN Thin Film Growth by Chemical Beam Epitaxy with Source Gas Flow Rate Modulation

Published online by Cambridge University Press:  01 February 2011

Yoshio Ohshita ,
Kenji Saito ,
Kenichi Nishimura ,
Toshihide Suzuki  and
Masafumi Yamaguchi
Yoshio Ohshita
Affiliation:
ohshita@toyota-ti.ac.jp, Toyota Techonological Institute, Semiconductor Lab., 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511, Japan
Kenji Saito
Affiliation:
sd2025@toyota-ti.ac.jp, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511, Japan
Kenichi Nishimura
Affiliation:
sd99142@toyota-ti.ac.jp, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511, Japan
Toshihide Suzuki
Affiliation:
ssk@toyota-ti.ac.jp, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511, Japan
Masafumi Yamaguchi
Affiliation:
masafumi@toyota-ti.ac.jp, Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511, Japan
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Abstract

The amount of residual carbon in the GaAsN film deposited by chemical beam epitaxy (CBE) is decreased by the flow rate modulation growth method (FM-CBE). The number of carbon atoms remained in the grown film increases as the growth temperature decreases. At low temperatures below 440°C, the carbon atoms are mainly originated from the nitrogen source gas mono-methylhydrazine. However, increasing the substrate temperature during the growth causes the deterioration of film qualities and the high growth temperature is not the solution for reducing the impurities. On the other hand, by intermitting the supply of gallium source triethylgallium while the arsenic and nitrogen sources are continuously supplied, the carbon concentration drastically decreases as compared with that grown by the conventional CBE growth. The results of temperature programmed desorption and ab initio calculations suggest that the desorption of adsorbates that contain C atom, such as, NHCH3, is enhanced by the FM-CBE growth, resulting in the decrease of the residual C concentration.

Keywords

III-Vchemical vapor deposition (CVD) (deposition)chemical vapor deposition (CVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-51
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. ndow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S. and Yazawa, Y., J. Appl. Phys. 35 1273(1996).Google Scholar
2. Weyers, M., Sato, M., Ando, H., Jpn. J. Appl. Phys. 31 L853(1992).Google Scholar
3. Friedman, D. J., Geisz, J. F., Kurtz, S. R. and Olson, J. M., J. Crystal Growth 195 409 (1998).Google Scholar
4. Lee, H.S., Nishimura, K., Yagi, Y., Tachibana, M., Ekins-Daukes, N. J., Ohshita, Y., Kojima, N., and Yamaguchi, M., J. Crystal Growth 275 1127 (2005)Google Scholar
5. Nishimura, K., Proc. 20th EU-PVSEC, 542 (2005).Google Scholar
6. Suzuki, H., Nishimiura, K., Lee, H. S., Ohshita, Y., Kojima, N., and Yamaguchi, M., Thin Solid Films (2006) in press.Google Scholar
7. Becke, A.D., J. Chm. Phys., 98, 5648 (1993). (DFT)Google Scholar