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GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes

Published online by Cambridge University Press:  22 February 2011

C.M. Reaves ,
J.C. Yen ,
N A. Cevallos ,
U.K. Mishra  and
S.P. DenBaars
C.M. Reaves
Affiliation:
Departments of Materials andUniversity of California, Santa Barbara CA 93106
J.C. Yen
Affiliation:
Electrical and Computer EngineeringUniversity of California, Santa Barbara CA 93106
N A. Cevallos
Affiliation:
Electrical and Computer EngineeringUniversity of California, Santa Barbara CA 93106
U.K. Mishra
Affiliation:
Electrical and Computer EngineeringUniversity of California, Santa Barbara CA 93106
S.P. DenBaars
Affiliation:
Departments of Materials andUniversity of California, Santa Barbara CA 93106
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Abstract

We have fabricated resonant tunneling diodes (RTD's) containing a GaInAs quantum well and strained GaInP barriers. These diodes exhibit good characteristics at 80 K with a peak to valley current ratio of 1.34 which is comparable to other reports for RTD in this material system. Additional RTD's were made using a InAs rich well region to study the effect of strain compensation. To investigate the properties of these structures, transmission electron microscopy (TEM) and low temperature photoluminescence (PL) were performed. TEM shows that both RTD structures contain misfit dislocations. PL measurements indicate that the dislocations are not significantly affecting the GaInAs quantum well.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 147
Copyright
Copyright © Materials Research Society 1994

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References

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