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Gallium Nitride Multioperate Optoelectronic Devices

Published online by Cambridge University Press:  10 February 2011

V. G. Sidorov ,
A. G. Drizhuk  and
D. V. Sidorov
V. G. Sidorov
Affiliation:
Semiconductor Physics Department, State Technical University, 29 Politechnicheskaya Str., St. Petersburg, 195251 Russia, rykov@phsc3.stu.neva.ru
A. G. Drizhuk
Affiliation:
Politechnical Institute, Vologda, Russia
D. V. Sidorov
Affiliation:
Semiconductor Physics Department, State Technical University, 29 Politechnicheskaya Str., St. Petersburg, 195251 Russia, rykov@phsc3.stu.neva.ru
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Abstract

Opportunity of creation of several optoelectronic devices such as optron, photoreceiver, switch device, IR-to-visible signal transformer and others based on i-n-GaN light emitting diodes (LED) is shown. Technology and properties of GaN LED in relation to the desired device properties are discussed. A discussion of issues relating to electrical and optical positive feed back between the device elements is also included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1137
Copyright
Copyright © Materials Research Society 1998

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References

1. Henish, H.K., Electroluminescence, Pergamon Press, Oxford-London-New York-Paris, 1962.Google Scholar
2. Drizhuk, A.G., Zaitsev, M.V., Sidorov, V.G. and Sidorov, D.V., in Compound Semiconductors, edited by Shur, M.S. and Suris, R.A. (Inst. Phys. Conf. Ser. No 155: Chapter 4, Bristol and Philadelphia, 1997), pp. 401–404.Google Scholar