Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-28T21:40:59.399Z Has data issue: false hasContentIssue false
  • English
  • Français

GaN Photonic-Crystal Surface-Emitting Laser

Published online by Cambridge University Press:  31 January 2011

Susumu Yoshimoto ,
Hideki Matsubara ,
Kyosuke Sakai  and
Susumu Noda
Susumu Yoshimoto
Affiliation:
s-yoshi@qoe.kuee.kyoto-u.ac.jp, Kyoto University, Electronic Science and Engineering, Kyoto, Kyoto, Japan
Hideki Matsubara
Affiliation:
matsubara-hideki@qoe.kuee.kyoto-u.ac.jp, Kyoto University, Electronic Science and Engineering, Kyoto, Kyoto, Japan
Kyosuke Sakai
Affiliation:
sakai@qoe.kuee.kyoto-u.ac.jp, Kyoto University, Pioneering Research Unit for Next Generation, Kyoto, Japan
Susumu Noda
Affiliation:
snoda@kuee.kyoto-u.ac.jp, Kyoto University, Electronic Science and Engineering, Kyoto, Japan
Get access

Abstract

We introduce the lasing principle and important characteristics of photonic-crystal surface-emitting laser (PC-SELs). Specifically, we demonstrate two-dimensional coherent lasing oscillation with GaN PC-SELs, using a unique crystal growth technique called “air hole retained overgrowth” (AROG). Above the threshold, we obtained a two-dimensionally distributed near-field pattern, and a distinctive far-field pattern with a divergence angle less than 1°. We also investigate a suitable sample structure for the reduction of the threshold current, where the PC structure is moved from an n-cladding layer to a p-cladding one. This is an important step towards the realization of novel light sources that can be integrated two dimensionally for a variety of new scientific and engineering applications in the blue to ultraviolet wavelengths.

Keywords

lasernitridecrystal growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I12-03
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Imada, M., et al, Appl. Phys. Lett. 75, 316 (1999).10.1063/1.124361Google Scholar
2 Noda, S., et al, Science 293, 1123 (2001).Google Scholar
3 Miyai, E. et al., Nature 441, 946 (2006).10.1038/441946aGoogle Scholar
4 Dorn, R., Quabis, S., Leuchs, G., Phys. Rev. Lett. 91, 233901 (2003).Google Scholar
5 Matsubara, H., Noda, S., et al, Science 319, 445 (2008)Google Scholar
6 Usui, A., et al, Jpn. J. Appl. Phys. 36, L899 (1997).Google Scholar