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GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications

Published online by Cambridge University Press:  11 February 2015

Zheng Sun ,
Shigeyoshi Usami ,
Di Lu ,
Takahiro Ishii ,
Marc Olsson ,
Kouhei Yamashita ,
Tadashi Mitsunari ,
Yoshio Honda  and
Hiroshi Amano
Zheng Sun
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
Shigeyoshi Usami
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
Di Lu
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
Takahiro Ishii
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
Marc Olsson
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
Kouhei Yamashita
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
Tadashi Mitsunari
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
Yoshio Honda
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
Hiroshi Amano
Affiliation:
Department of Electrical Engineering and Computer Science, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan Akasaki Research Center, VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan VBL, Nagoya Univ, C3-1, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan
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Abstract

We developed a new GaN on SiC growth method by metalorganic vapour phase epitaxy (MOVPE) using of a single 2-dimension-growth step. Prior to epitaxy, to inhibit pre-reaction of Si-face SiC substrate with TMGa and NH3, TMAl was flowed without NH3. 1.5 μm of undoped crack-free GaN was grown on 6H-SiC (Si-face). Without buffer layer, the vertical resistance of GaN/SiC structure was found to be around 82.1Ω as determined by I-V characteristic. Further reduction in vertical resistance is expected by growth of n-GaN (1.5μm)/SiC structure (300μm). We also expect a SiC-based GaN heterostructure vertical FET will achieve high power and high switching speed performance.

Keywords

electronic materialelectronic structureIII-V
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t05-12
Copyright
Copyright © Materials Research Society 2015 

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References

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