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Gas Phase Spectroscopy of a Ge Film LCVD Reactor

Published online by Cambridge University Press:  21 February 2011

J. F. Osmundsen ,
C. C. Abele  and
J. G. Eden
J. F. Osmundsen
Affiliation:
University of Illinois, Urbana, IL 61801
C. C. Abele
Affiliation:
University of Illinois, Urbana, IL 61801
J. G. Eden
Affiliation:
University of Illinois, Urbana, IL 61801
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Abstract

The gas phase photochemistry of an LCVD reactor used to grow polycrystalline Ge films was studied by absorption and emission spectroscopy. Upon photodissociating GeH4 (5% in an Ar or He carrier) at 248 nm (KrF laser), excited states of Ge and GeH are produced. Spatially, spectrally and temporally resolved atomic and molecular emissions are monitored as a function of gas pressure and laser intensity. These data lead to the conclusion that GeH2 is predominantly produced directly from GeH4 by The simultaneous absorption of two 5 eV (λ = 248 nm) photons.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 259
Copyright
Copyright © Materials Research Society 1984

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References

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