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Ge Surface Displacements Due to Low Energy Particles

Published online by Cambridge University Press:  25 February 2011

S. T. Picraux ,
K. M. Horn ,
E. Chason ,
J. Y. Tsao ,
P. Bedrossian ,
T. Klitsner  and
D. K. Brice
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
K. M. Horn
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
P. Bedrossian
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
T. Klitsner
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
D. K. Brice
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
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Abstract

The production of surface defects by low energy 4He and Xe ions incident on very smooth Ge(001)2x1 surfaces is reported. Roughening at -50°C by 100-500 eV ions is measured by RHEED in real-time using the intensity of the out-of-phase specular beam. For He, the surface displacements per ion range from 0.05 to 0.3 and are comparable to our binary collision calculated surface vacancy production rate for a displacement threshold energy of 11 eV (3/4 of bulk value). For Xe, the displacement rate ranges from 2 to 10 (∼30x higher) and falls between the calculated total vacancy and total defect (vacancy + interstitial) production rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 235
Copyright
Copyright © Materials Research Society 1992

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References

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