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Generalized Activation Energy Spectrum Theory: A New Approachfor modeling Structural Relaxation in Amorphous Solids

Published online by Cambridge University Press:  15 February 2011

Jung H. Shin  and
Harry A. Atwater
Jung H. Shin
Affiliation:
Thomas Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena CA 91125
Harry A. Atwater
Affiliation:
Thomas Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena CA 91125
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Abstract

A general approach to the dynamics of structural relaxation in amorphoussolids is developed. A form of the recombination kinetics of defects ischosen which removes the ad hoc assumption made in previoustheories that defects recombine only with others of identical activationenergy. The generalized theory is tested quantitatively by modelling thestructural relaxation of amorphous silicon, and comparing the results withthe experimental data on structural relaxation. It is found that thegeneralized theory is necessary in order to accurately describe thetime-resolved relaxation data. The generalized theory is also applied toestimate the effect of irradiation on the nucleation kinetics of crystalsilicon, and is found to agree well with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 167
Copyright
Copyright © Materials Research Society 1994

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References

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