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Generation Recombination Noise in GaN Photoconducting Detectors

Published online by Cambridge University Press:  15 February 2011

M. Misra ,
D. Doppalapudi ,
A.V. Sampath ,
T.D. Moustakas  and
P.H. McDonald
M. Misra
Affiliation:
Center for Photonics Research, Boston University, MA 02215
D. Doppalapudi
Affiliation:
Center for Photonics Research, Boston University, MA 02215
A.V. Sampath
Affiliation:
Center for Photonics Research, Boston University, MA 02215
T.D. Moustakas
Affiliation:
Center for Photonics Research, Boston University, MA 02215
P.H. McDonald
Affiliation:
Center for Photonics Research, Boston University, MA 02215
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Abstract

Low frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generation-recombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G7.8
Copyright
Copyright © Materials Research Society 1999

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