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Geometric Effects on the Transient Cooling of Thermoelectric Coolers

Published online by Cambridge University Press:  21 March 2011

Ronggui Yang ,
Gang Chen ,
G. Jeffrey Snyder  and
Jean-Pierre Fleuriel
Ronggui Yang
Affiliation:
Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, MA 02139
Gang Chen
Affiliation:
Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, MA 02139
G. Jeffrey Snyder
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, MS 277-207, Pasadena, CA 91109
Jean-Pierre Fleuriel
Affiliation:
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, MS 277-207, Pasadena, CA 91109
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Abstract

Transient thermoelectric cooling effect has been known since 1960s. Most of the previous studies focus on the minimum temperature achievable for free standing thermoelectric elements. Practical thermoelectric coolers have a passive mass load, which affect the minimum temperature achievable. This is particularly true for thermoelectric micro coolers because the object to be cooled is comparable to the micro coolers in size. In this paper, we present the performance analysis of the integrated system made of the cooling object and thermoelectric element, and establish the criterion for the utilization of transient cooling effect based on the analysis of the time constants. Effects of thermoelectric element shape on the transient thermoelectric cooling effect are also studied.

Keywords

Transient CoolingThermoelectricThermal Management
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 691: Symposium G – Thermoelectric Materials 2001--Research and Applications , 2001 , G8.27
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

[1]. Stilbans, L. S. and Fedorovich, N. A., Soviet Phys-Tech. Phys., 3, p. 460–463 (1958).Google Scholar
[2]. Parrott, J. E., Solid-State Electronics, Vol. 1, pp. 135–143 (1960).Google Scholar
[3]. Landecker, K. and Findlay, A. W., Solid State Electronics, 2, p. 239–260 (1961).Google Scholar
[4]. Idnurm, M. and Landecker, K., J.Appl. Phys., 34, p 1806–1810 (1963).Google Scholar
[5]. Babin, V. P. and Iordanishvili, E. K., Soviet Phys-Tech. Phys., 14, p. 293–298 (1969).Google Scholar
[6]. Hoyos, G. E., Rao, K. R. and, Jerger, D., Energy Conversion, Vol.17, pp. 23–29 (1977).Google Scholar
[7]. Field, R. L. and Blum, H. A., Energy Conversion, Vol. 19, pp. 159–165 (1979)Google Scholar
[8]. Miner, A., Majumdar, A., and Ghoshal, U., Appl. Phys. Lett. 75, 1176 (1999)Google Scholar
[9]. Hoyos, G. E., Rao, K. R., and Jerger, D., Energy Conversion, 17, pp.45–54 (1977)Google Scholar
[10]. Landecker, K., Energy Conversion, Vol. 14, pp. 21–33 (1974)Google Scholar
[11]. Volklein, F., Blumers, M., and Schmitt, L., 18th ICT, pp. 285–93 (1999).Google Scholar
[12]. Fleurial, J. -P., Snyder, G.J., and Herman, J.A. et al. 18th ICT, pp. 294–300 (1999).Google Scholar
[13]. Min, G., Row, D. M., and Volklein, F., Electronics Letters, Vol. 34 pp. 222–223 (1998).Google Scholar
[14]. Yao, D. J., Kim, C. J. and Chen, G., International Mechanical Engineering Congress and Exhibition, Orlando, Florida (2000).Google Scholar
[15]. Kumar, R., Yang, R. G., and Chen, G. et al. , Proceedings of MRS Spring Meeting (2000).Google Scholar
[16]. Yang, R. G., Chen, G., and Snyder, G. J. et al. , unpublished.Google Scholar