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Germanium Redistribution Phenomena in the Synthesis of SiGe Layers

Published online by Cambridge University Press:  03 September 2012

C. J. Patel  and
J. B. Butcher
C. J. Patel
Affiliation:
Middlesex University, Microelectronics Research Centre, Bounds Green Road, London, UK
J. B. Butcher
Affiliation:
Middlesex University, Microelectronics Research Centre, Bounds Green Road, London, UK
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Abstract

A unique germanium redistribution phenomenon occurs in the synthesis of SiGe by 74Ge+ ion implantation. A number of silicon samples were implanted with 74Ge+ ion using a range of substrate temperatures (R.T. to 600°C) with different germanium fluences (1.5 × 1016 cm-2 to 4 × 1016 cm-2) and implantation energies (100keV – 18OKeV). Samples were germanium profiled using Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS).The experimental results show that the peak range of the germanium implant increases progressively above 150°C and a shift of 40nm in the peak germanium range was measured for a sample implanted at 600°C. The ‘hot’ implants have an extended tail profile contrary to the Debye model for root-mean-square deviations of the lattice atoms from their equilibrium sites which should ideally contribute to dechanneling. The data suggest strongly that dynamic annealing related diffusion (DARD) processes exist, whereby mobile non-equilibrium point defects influence diffusion to take place at the elevated implantation temperature. The SIMS spectra of samples implanted with high Ge fluences at elevated temperature show “uphill” diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 223
Copyright
Copyright © Materials Research Society 1997

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