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Gettering Control at Bonding Interface in ELTRAN®

Published online by Cambridge University Press:  21 March 2011

Kazutaka Momoi ,
Masataka Ito ,
Nobuhiko Sato ,
Noriaki Honma  and
Takao Yonehara
Kazutaka Momoi
Affiliation:
ELTRAN Business Center, Canon Inc., 6770 Tamura, Hiratsuka, Kanagawa, 254-0013, Japan
Masataka Ito
Affiliation:
ELTRAN Business Center, Canon Inc., 6770 Tamura, Hiratsuka, Kanagawa, 254-0013, Japan
Nobuhiko Sato
Affiliation:
ELTRAN Business Center, Canon Inc., 6770 Tamura, Hiratsuka, Kanagawa, 254-0013, Japan
Noriaki Honma
Affiliation:
ELTRAN Business Center, Canon Inc., 6770 Tamura, Hiratsuka, Kanagawa, 254-0013, Japan
Takao Yonehara
Affiliation:
ELTRAN Business Center, Canon Inc., 6770 Tamura, Hiratsuka, Kanagawa, 254-0013, Japan
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Abstract

ABSTRUCT:

Heavy metal gettering capability on ELTRAN® was studied by controlling surface treatments for handle wafer prior to wafer bonding. Hydrophobic bonding pre-treatments wafer had much higher heavy metal gettering capability at bonding interface than hydrophilic wafer. In the case of hydrophilic bonding pre-treatments, atomically flat bonding interface was observed by cross-sectional TEM. On the other hand, in the case of hydrophobic bonding pre-treatments, “nano gaps” were observed at bonding interface. We concluded that these differences in the structure at the bonding interface caused the difference in the gettering capability. It is possible to control gettering capability by no additional steps in SOI wafer process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I9.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Okonogi, K., Science of Silicon, ed. UCS Semiconductor Technology Symposium (Realize Inc., Japan, 1996), p. 609 Google Scholar
2. Furihata, J., Nakano, M. and Mitani, K., Jpn. J. Appl. Phys. 39, 2251 (2000).Google Scholar
3. Yonehara, T., Sakaguchi, K. and Sato, N., Appl. Phys. Lett. 64, 2108 (1994).Google Scholar
4. Yonehara, T., Sakaguchi, K. and Sato, N., Proc. 9th Int. Symp. on Silicon-on-Insulator Tech. And Devices, 99-3, The Electrochemical Society, Seattle, p. 111 (1999).Google Scholar
5. Kondo, H., Ryuta, J., Morita, E., Yoshimi, T. and Shimanuki, Y., Jpn. J. Appl. Phys. 31, L11 (1992).Google Scholar
6. Kawai, Y., Ishigami, S., Furuya, H., Shingyouji, T. and Saitoh, Y., PROCEEDINGS OF THE SECOND INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS, Hawaii, p. 216 (1992).Google Scholar
7. Ghidini, G. and Smith, F. W., J. Electrochem. Soc. 131, 2924 (1984).Google Scholar