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Published online by Cambridge University Press: 15 February 2011
The giant magnetoresistance in FeMn exchange-biased NiFe-based multilayer spin-valve structures prepared by rf-diode sputtering technique were studied. Experiments were performed on samples with different thicknesses of each layer in these multilayers. The magnetic properties were measured using a vibrating sample magnetometer and the giant magnetoresistance was measured using an in-line four-point magnetoresistance probe. A magnetoresistance of 6.5% in a magnetic field of less than 15 Oe was obtained in a Cu(30Å)/FeMn(150Å)/NiFe(50Å)/Co(15Å)/ Cu(20Å)/Co(15Å)/NiFe(60Å) multilayer structure at room temperature. Annealing experiments of these multilayers were performed to study the thermal stability during the recording head fabrication processes. No degradation in the magnetoresistance has been found for annealing these films at 230°C up to four hours.