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Grain Boundary Passivation and Analysis for Solar Cell Applications

Published online by Cambridge University Press:  15 February 2011

V. J. Rao ,
W. A. Anderson  and
F. Kai
V. J. Rao
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, New York 14226
W. A. Anderson
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, New York 14226
F. Kai
Affiliation:
Department of Electrical Engineering, State University of New York at Buffalo, 4232 Ridge Lea Road, Amherst, New York 14226
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Abstract

Grain boundaries in Wacker poly-Si are shown to contribute mid-gap interface states, a greater frequency dependence in a.c. conductance, and lesser frequency dependence in capacitance. H-passivation was shown to be effective in reducing grain boundary effects as evidenced by 4-point probe resistance and IR studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 229
Copyright
Copyright © Materials Research Society 1982

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References

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