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Graphene Growth on SiC and Metal Surfaces by Solid Source Carbon Deposition

Published online by Cambridge University Press:  01 February 2011

W. C. Mitchel ,
J. H. Park ,
H. E. Smith  and
L. Grazulis
W. C. Mitchel
Affiliation:
william.mitchel@wpafb.af.mil, Air Force Research Laboratory, Materials and Manufacturing Direcctorate, Wright Patterson AFB, Ohio, United States
J. H. Park
Affiliation:
jeongho.park@wpafb.af.mil, Air Force Research Laboratory, Materials and Manufacturing Direcctorate, Wright Patterson AFB, Ohio, United States
H. E. Smith
Affiliation:
Howard.smith@wpafb.af.mil, Air Force Research Laboratory, Materials and Manufacturing Direcctorate, Wright Patterson AFB, Ohio, United States
L. Grazulis
Affiliation:
lawrence.grazulis@wpafb.af.mil, Air Force Research Laboratory, Materials and Manufacturing Direcctorate, Wright Patterson AFB, Ohio, United States
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Abstract

Graphene has been grown by direct deposition of carbon from solid sources on both SiC and Ta films on SiC in an MBE environment. Carbon fluxes were obtained from thermally evaporated C60 and from a heated graphite filament. The graphene films were characterized by Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy. Graphene films on Si-face SiC grown by carbon source MBE (CSMBE) were compared with graphene grown by the standard epitaxial graphene process using SiC thermal decomposition. CSMBE on SiC was found to grow at lower temperatures (1200°C) and to have fewer pits and a more uniform surface. Uniform graphene films were found to grow on Ta films after exposure to both carbon sources at 1200°C but Raman measurements showed no signs of graphene on films exposed to the same temperature without a carbon flux.

Keywords

Cmolecular beam epitaxy (MBE)Raman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B10-02
Copyright
Copyright © Materials Research Society 2010

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